By Design RAD HARD BJT
SEMICOA announces a new process that decreases ionizing radiation charges trapped on or near the surfaces layers of the bi-polar junction transistors (BJT). This repeatable process produces robust 500K radiation hardened BJTs By Design. Providing a reliable source for customers needing transistors that withstand total dose irradiation effects without wafer screening. New Products preparing for Qual include:
  • 2N2222AUBCJSF

    (NPN, 75V, UB, /255)
  • 2N2484UBCJSF

    (NPN, 60V, UB, /376)
  • 2N2907AUBCJSF

    (NPN, 50V, TO-39, /366)
Eight New QPL Products
JANTX2N3637 (PNP,175V,1A,TO-39) JANTXV2N3637 (SS,PNP,175V,1A,TO-39) JANTX2N3637 (PNP,175V,1A,TO-5) JANTXV2N3637 (PNP,175V,1A,TO-5) JANTX2N5666S (NPN,200V,6A,TO-39) JANTXV2N5666S (NPN,200V,6A,TO-39) JANTX2N5666 (NPN,200V,6A,TO-5) JANTXV2N5666 (NPN,200V,6A,TO-5)
Coming Soon
JANS2N3637 JANTX2N2920 JANS2N5666 JANTX2N3637UB JANS2N2920 JANSR2N2920U JANTX2N2920U JANS2N2920U JANSR2N2920 JANS2N3637L JANSR2N3637 JANSR2N3637L JANSR3637UB