By Design RAD HARD BJTSEMICOA announces a new process that decreases ionizing radiation charges trapped on or near the surfaces layers of the bi-polar junction transistors (BJT). This repeatable process produces robust 500K radiation hardened BJTs By Design. Providing a reliable source for customers needing transistors that withstand total dose irradiation effects without wafer screening. New Products preparing for Qual include:
2N2222AUBCJSF(NPN, 75V, UB, /255)
2N2484UBCJSF(NPN, 60V, UB, /376)
2N2907AUBCJSF(NPN, 50V, TO-39, /366)
Eight New QPL Products
|JANTX2N3637 (PNP,175V,1A,TO-39) JANTXV2N3637 (SS,PNP,175V,1A,TO-39) JANTX2N3637 (PNP,175V,1A,TO-5) JANTXV2N3637 (PNP,175V,1A,TO-5) JANTX2N5666S (NPN,200V,6A,TO-39) JANTXV2N5666S (NPN,200V,6A,TO-39) JANTX2N5666 (NPN,200V,6A,TO-5) JANTXV2N5666 (NPN,200V,6A,TO-5)|
|JANS2N3637 JANTX2N2920 JANS2N5666 JANTX2N3637UB||JANS2N2920 JANSR2N2920U JANTX2N2920U||JANS2N2920U JANSR2N2920 JANS2N3637L||JANSR2N3637 JANSR2N3637L JANSR3637UB|
April 19, 2013
SEMICOA to Present at Space Parts Working Group Conference DoubleTree by Hilton, Torrance, CA, April 23-24, 2013...
March 26, 2013
SEMICOA ANNOUNCES NEW “JANS” AND “JANSF” LEVEL QPL TRANSISTORS...
February 25, 2013
SEMICOA ANNOUNCES QPL TRANSISTORS: Target Demanding Avionics, Aerospace and Defense Applications...